1N5622
vs
HER108GA1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
DIGITRON SEMICONDUCTORS
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
compliant
Category CO2 Kg
8.8
8.8
Compliance Temperature Grade
Military: -65C to +200C
Military: -55C to +150C
Application
GENERAL PURPOSE
GENERAL PURPOSE
Breakdown Voltage-Min
1100 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.3 V
JESD-30 Code
O-XALF-W2
O-PALF-W2
JESD-609 Code
e0
e3
Non-rep Pk Forward Current-Max
30 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
200 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Output Current-Max
1 A
1 A
Package Body Material
UNSPECIFIED
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Rep Pk Reverse Voltage-Max
1000 V
1000 V
Reverse Current-Max
0.5 µA
Reverse Recovery Time-Max
2 µs
0.075 µs
Reverse Test Voltage
1000 V
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
13
1
Package Description
ROHS COMPLIANT, PLASTIC PACKAGE-2
ECCN Code
EAR99
HTS Code
8541.10.00.80
EU RoHS Version
RoHS 2 (2015/863/EU)
EU RoHS Exemptions
7(a), 7(c)-I
Candidate List Date
2020-01-16
Conflict Mineral Status
DRC Conflict Free
Conflict Mineral Status Source
CMRT V5.12
Additional Feature
FREE WHEELING DIODE, HIGH RELIABILITY
JEDEC-95 Code
DO-41
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