1N5620
vs
1N4006SGP1G
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
MICROSS COMPONENTS
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Reach Compliance Code |
unknown
|
compliant
|
| Factory Lead Time |
27 Weeks
|
|
| Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY, LOW POWER LOSS
|
| Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
| Breakdown Voltage-Min |
880 V
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.5 V
|
|
| JESD-30 Code |
E-XALF-W2
|
O-PALF-W2
|
| Non-rep Pk Forward Current-Max |
30 A
|
30 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-55 °C
|
| Output Current-Max |
2 A
|
1 A
|
| Package Body Material |
UNSPECIFIED
|
PLASTIC/EPOXY
|
| Package Shape |
ELLIPTICAL
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Not Qualified
|
|
| Rep Pk Reverse Voltage-Max |
800 V
|
800 V
|
| Reverse Current-Max |
0.5 µA
|
|
| Reverse Recovery Time-Max |
2 µs
|
|
| Reverse Test Voltage |
800 V
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
15
|
1
|
| Rohs Code |
|
Yes
|
| Package Description |
|
O-PALF-W2
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.80
|
| Terminal Finish |
|
PURE TIN
|
|
|
|
Compare 1N5620 with alternatives
Compare 1N4006SGP1G with alternatives