1N5617C.TR
vs
1N5617C.TR
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
MICROSS COMPONENTS
|
SEMTECH CORP
|
| Reach Compliance Code |
unknown
|
unknown
|
| Factory Lead Time |
12 Weeks
|
|
| Additional Feature |
HIGH RELIABILITY, LOW LEAKAGE CURRENT
|
HIGH RELIABILITY
|
| Application |
FAST RECOVERY
|
FAST RECOVERY
|
| Breakdown Voltage-Min |
400 V
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.6 V
|
1.6 V
|
| JESD-30 Code |
E-XALF-W2
|
E-XALF-W2
|
| Non-rep Pk Forward Current-Max |
25 A
|
25 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
ELLIPTICAL
|
ELLIPTICAL
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Rep Pk Reverse Voltage-Max |
400 V
|
400 V
|
| Reverse Current-Max |
1 µA
|
1 µA
|
| Reverse Recovery Time-Max |
0.15 µs
|
0.15 µs
|
| Reverse Test Voltage |
400 V
|
400 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
1
|
1
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.80
|
|
|
|
Compare 1N5617C.TR with alternatives
Compare 1N5617C.TR with alternatives