1N5614
vs
1N5614TR
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
MICROSEMI CORP
|
CENTRAL SEMICONDUCTOR CORP
|
| Package Description |
HERMETIC SEALED, GLASS, A PACKAGE-2
|
E-PALF-W2
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| Additional Feature |
HIGH RELIABILITY, METALLURGICALLY BONDED
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
O-LALF-W2
|
E-XALF-W2
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
200 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
GLASS
|
UNSPECIFIED
|
| Package Shape |
ROUND
|
ELLIPTICAL
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
200 V
|
200 V
|
| Reverse Recovery Time-Max |
2 µs
|
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
16
|
1
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.80
|
| Application |
|
GENERAL PURPOSE
|
| Forward Voltage-Max (VF) |
|
1.2 V
|
| Non-rep Pk Forward Current-Max |
|
50 A
|
| Reverse Current-Max |
|
0.5 µA
|
| Reverse Test Voltage |
|
200 V
|
|
|
|
Compare 1N5614TR with alternatives