1N5611
vs
1.5SMC8.2AHR7
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
compliant
Breakdown Voltage-Min
43.7 V
7.79 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Operating Temperature-Max
175 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
40.3 V
7.02 V
Technology
AVALANCHE
AVALANCHE
Base Number Matches
5
1
Rohs Code
Package Description
R-PDSO-C2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
8.61 V
Breakdown Voltage-Nom
8.2 V
Clamping Voltage-Max
12.1 V
JEDEC-95 Code
DO-214AB
JESD-30 Code
R-PDSO-C2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max
6.5 W
Reference Standard
AEC-Q101
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
C BEND
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
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