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1N5557 vs JAN1N5557 feature comparison

1N5557 ProTek Devices

Buy Now Datasheet

JAN1N5557 Silicon Transistor Corporation

Buy Now Datasheet
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer PROTEK DEVICES SILICON TRANSISTOR CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 54 V 54 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 78.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-MALF-W2 O-MALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 11 8
JEDEC-95 Code DO-13
Reference Standard MIL-19500/500
Rep Pk Reverse Voltage-Max 49 V
Diodes » Transient Suppressors
Diodes » Transient Suppressors

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