1N5556
vs
JANTXV1N5556
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SEMITRONICS CORP
SEMICON COMPONENTS INC
Part Package Code
DO-13
Package Description
HERMETIC SEALED, GLASS PACKAGE-2
Pin Count
2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Min
43.7 V
43.7 V
Breakdown Voltage-Nom
44 V
44 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
63.5 V
63.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-13
JESD-30 Code
O-LALF-W2
O-XALF-W2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
40.3 V
40 V
Surface Mount
NO
NO
Technology
ZENER
AVALANCHE
Terminal Finish
Tin/Lead (Sn/Pb)
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Additional Feature
TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Power Dissipation-Max
1 W
Reference Standard
MIL-19500/434
Reverse Current-Max
5 µA
Compare 1N5556 with alternatives
Compare JANTXV1N5556 with alternatives