1N5556 vs JAN1N6160A feature comparison

1N5556 Semitronics Corp

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JAN1N6160A Micross Components

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Rohs Code No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SEMITRONICS CORP MICROSS COMPONENTS
Part Package Code DO-13
Package Description HERMETIC SEALED, GLASS PACKAGE-2 HERMETIC SEALED, GLASS PACKAGE-2
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Min 43.7 V 53.2 V
Breakdown Voltage-Nom 44 V 56 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 63.5 V 77 V
Configuration SINGLE COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-13
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 2
Number of Terminals 2 2
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Qualification Status Not Qualified Qualified
Rep Pk Reverse Voltage-Max 40.3 V 42.6 V
Surface Mount NO NO
Technology ZENER AVALANCHE
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 2
Additional Feature HIGH RELIABILITY
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Power Dissipation-Max 5 W
Reference Standard MIL-19500/516
Reverse Current-Max 5 µA

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