1N5556 vs JANTX1N5655A feature comparison

1N5556 Advanced Semiconductor Inc

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JANTX1N5655A Defense Logistics Agency

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Part Life Cycle Code Active Active
Ihs Manufacturer ASI SEMICONDUCTOR INC DEFENSE LOGISTICS AGENCY
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Min 43.7 V 77.9 V
Breakdown Voltage-Nom 44 V
Case Connection CATHODE ISOLATED
Clamping Voltage-Max 63.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-13 DO-13
JESD-30 Code O-MALF-W2 O-XALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material METAL UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Qualified
Rep Pk Reverse Voltage-Max 40 V 70.1 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Package Description DO-13, 2 PIN
Breakdown Voltage-Max 86.1 V
Power Dissipation-Max 1 W
Reference Standard MIL-19500/500D

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