1N5553
vs
JAN1N5553
feature comparison
| Part Life Cycle Code |
Obsolete
|
|
| Ihs Manufacturer |
INTERNATIONAL SEMICONDUCTOR INC
|
|
| Reach Compliance Code |
unknown
|
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.80
|
|
| Application |
GENERAL PURPOSE
|
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
RECTIFIER DIODE
|
|
| Forward Voltage-Max (VF) |
1.3 V
|
|
| JESD-30 Code |
O-LALF-W2
|
|
| Non-rep Pk Forward Current-Max |
100 A
|
|
| Number of Elements |
1
|
|
| Number of Phases |
1
|
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
175 °C
|
|
| Output Current-Max |
3 A
|
|
| Package Body Material |
GLASS
|
|
| Package Shape |
ROUND
|
|
| Package Style |
LONG FORM
|
|
| Qualification Status |
Not Qualified
|
|
| Rep Pk Reverse Voltage-Max |
800 V
|
|
| Reverse Recovery Time-Max |
2 µs
|
|
| Surface Mount |
NO
|
|
| Terminal Form |
WIRE
|
|
| Terminal Position |
AXIAL
|
|
| Base Number Matches |
1
|
|
|
|
|
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