1N5551TIN/LEAD
vs
1N5418
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Contact Manufacturer
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
GULF SEMICONDUCTOR LTD
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Date Of Intro
2018-01-30
Additional Feature
HIGH RELIABILITY
Application
GENERAL PURPOSE
FAST SOFT RECOVERY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
1.5 V
JESD-30 Code
E-LALF-W2
E-LALF-W2
JESD-609 Code
e0
Non-rep Pk Forward Current-Max
100 A
100 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
200 °C
175 °C
Operating Temperature-Min
-65 °C
-65 °C
Output Current-Max
3 A
3 A
Package Body Material
GLASS
GLASS
Package Shape
ELLIPTICAL
ELLIPTICAL
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Rep Pk Reverse Voltage-Max
400 V
400 V
Reverse Current-Max
1 µA
1 µA
Reverse Recovery Time-Max
2 µs
0.15 µs
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
1
Package Description
HERMETICALLY SEALED, GLASS, G-4, 2 PIN
Technology
AVALANCHE
Compare 1N5551TIN/LEAD with alternatives
Compare 1N5418 with alternatives