1N5550D3B-JQRS.GRPB vs GS3DF1 feature comparison

1N5550D3B-JQRS.GRPB TT Electronics Power and Hybrid / Semelab Limited

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GS3DF1 Yangzhou Yangjie Electronics Co Ltd

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Part Life Cycle Code Active Active
Ihs Manufacturer SEMELAB LTD YANGZHOU YANGJIE ELECTRONICS CO LTD
Package Description R-CDSO-N2 R-PDSO-C2
Pin Count 2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature HIGH RELIABILITY HIGH RELIABILITY, LOW POWER LOSS
Application POWER EFFICIENCY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-CDSO-N2 R-PDSO-C2
JESD-609 Code e4 e3
Non-rep Pk Forward Current-Max 100 A 100 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Output Current-Max 3 A 3 A
Package Body Material CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 200 V 200 V
Reverse Recovery Time-Max 2 µs
Surface Mount YES YES
Terminal Finish GOLD TIN
Terminal Form NO LEAD C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 1
Rohs Code Yes
Forward Voltage-Max (VF) 1.1 V
JEDEC-95 Code DO-214AB
Reverse Current-Max 5 µA

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