1N5550D3A-JQRS.CVP vs US3DCF feature comparison

1N5550D3A-JQRS.CVP TT Electronics Power and Hybrid / Semelab Limited

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US3DCF Galaxy Semi-Conductor Co Ltd

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Part Life Cycle Code Active Active
Ihs Manufacturer SEMELAB LTD GALAXY SEMI-CONDUCTOR CO LTD
Package Description R-CDSO-N2 R-PDSO-F2
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature HIGH RELIABILITY
Application POWER EFFICIENCY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-CDSO-N2 R-PDSO-F2
JESD-609 Code e4
Non-rep Pk Forward Current-Max 100 A 100 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Output Current-Max 3 A 3 A
Package Body Material CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 200 V 200 V
Reverse Recovery Time-Max 2 µs 0.05 µs
Surface Mount YES YES
Terminal Finish GOLD
Terminal Form NO LEAD FLAT
Terminal Position DUAL DUAL
Base Number Matches 2 2
Forward Voltage-Max (VF) 1 V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reverse Current-Max 10 µA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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