1N5530B vs 1N5530B-1TR feature comparison

1N5530B Invensys Sensor Systems

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1N5530B-1TR Microsemi Corporation

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Rohs Code No No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer INVENSYS SENSOR SYSTEMS MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Configuration SINGLE SINGLE
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 60 Ω
JEDEC-95 Code DO-35 DO-204AH
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Power Dissipation-Max 0.4 W 0.48 W
Reference Voltage-Nom 10 V 10 V
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Tol-Max 5% 5%
Working Test Current 1 mA 1 mA
Base Number Matches 25 1
Part Package Code DO-35
Package Description HERMETIC SEALED, GLASS, DO-35, 2 PIN
Pin Count 2
Additional Feature METALLURGICAL BONDED
Case Connection ISOLATED
Diode Element Material SILICON
Moisture Sensitivity Level 1
Operating Temperature-Min -65 °C
Polarity UNIDIRECTIONAL
Qualification Status Not Qualified
Technology AVALANCHE

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