1N5530
vs
1N5530
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
KNOX SEMICONDUCTORS INC
|
M/A-COM TECHNOLOGY SOLUTIONS INC
|
| Part Package Code |
DO-7
|
|
| Package Description |
O-LALF-W2
|
GLASS PACKAGE-2
|
| Pin Count |
2
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Additional Feature |
LOW NOISE
|
LOW NOISE
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| Dynamic Impedance-Max |
60 Ω
|
|
| JEDEC-95 Code |
DO-7
|
DO-7
|
| JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
0.4 W
|
0.5 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Voltage-Nom |
10 V
|
10 V
|
| Reverse Current-Max |
0.05 µA
|
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Voltage Temp Coeff-Max |
7.5 mV/°C
|
|
| Voltage Tol-Max |
20%
|
20%
|
| Working Test Current |
1 mA
|
1 mA
|
| Base Number Matches |
10
|
47
|
| Date Of Intro |
|
1994-06-01
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare 1N5530 with alternatives
Compare 1N5530 with alternatives