1N5525B vs JAN1N5525B-1 feature comparison

1N5525B Knox Semiconductor Inc

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JAN1N5525B-1 Compensated Devices Inc

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Rohs Code No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer KNOX SEMICONDUCTORS INC COMPENSATED DEVICES INC
Package Description GLASS PACKAGE-2 DO-7, 2 PIN
Reach Compliance Code unknown unknown
Additional Feature LOW NOISE METALLURGICALLY BONDED
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 30 Ω
JEDEC-95 Code DO-7 DO-35
JESD-30 Code O-LALF-W2 O-XALF-W2
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Package Body Material GLASS UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.4 W 0.5 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 6.2 V 6.2 V
Reverse Current-Max 1 µA 1 µA
Surface Mount NO NO
Technology AVALANCHE ZENER
Terminal Finish TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Temp Coeff-Max 3.1 mV/°C
Voltage Tol-Max 5% 5%
Working Test Current 1 mA 1 mA
Base Number Matches 24 9
Operating Temperature-Min -65 °C
Reference Standard MIL-19500/437E