1N5461B
vs
1N5461B
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
API TECHNOLOGIES CORP
LOCKHEED MARTIN MICROWAVE
Package Description
O-LALF-W2
O-LALF-W2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
HIGH Q
HIGH RELIABILITY
Breakdown Voltage-Min
30 V
30 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Cap Tolerance
5%
5%
Diode Capacitance Ratio-Min
2.7
2.7
Diode Capacitance-Nom
6.8 pF
6.8 pF
Diode Element Material
SILICON
SILICON
Diode Type
VARIABLE CAPACITANCE DIODE
VARIABLE CAPACITANCE DIODE
Frequency Band
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 Code
O-LALF-W2
O-LALF-W2
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Power Dissipation-Max
0.4 W
0.4 W
Qualification Status
Not Qualified
Not Qualified
Quality Factor-Min
600
600
Rep Pk Reverse Voltage-Max
30 V
Reverse Current-Max
2e-8 µA
0.02 µA
Reverse Test Voltage
25 V
25 V
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Variable Capacitance Diode Classification
ABRUPT
ABRUPT
Base Number Matches
2
3
JEDEC-95 Code
DO-7
Compare 1N5461B with alternatives
Compare 1N5461B with alternatives