1N5461B
vs
JAN1N5461B
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
LOCKHEED MARTIN MICROWAVE
KNOX SEMICONDUCTORS INC
Package Description
O-LALF-W2
O-LALF-W2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Min
30 V
30 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Cap Tolerance
5%
5%
Diode Capacitance Ratio-Min
2.7
2.7
Diode Capacitance-Nom
6.8 pF
6.8 pF
Diode Element Material
SILICON
SILICON
Diode Type
VARIABLE CAPACITANCE DIODE
VARIABLE CAPACITANCE DIODE
Frequency Band
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JEDEC-95 Code
DO-7
DO-7
JESD-30 Code
O-LALF-W2
O-LALF-W2
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
150 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Power Dissipation-Max
0.4 W
0.4 W
Qualification Status
Not Qualified
Not Qualified
Quality Factor-Min
600
600
Reverse Current-Max
0.02 µA
2e-8 µA
Reverse Test Voltage
25 V
25 V
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Variable Capacitance Diode Classification
ABRUPT
ABRUPT
Base Number Matches
3
1
Rohs Code
Part Package Code
DO-7
Pin Count
2
JESD-609 Code
e0
Operating Temperature-Min
-65 °C
Reference Standard
MIL
Rep Pk Reverse Voltage-Max
30 V
Terminal Finish
TIN LEAD
Compare 1N5461B with alternatives
Compare JAN1N5461B with alternatives