1N5439 vs 1N5439 feature comparison

1N5439 International Semiconductor Inc

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1N5439 Cobham PLC

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC KNOX SEMICONDUCTORS INC
Package Description O-LALF-W2 O-LALF-W2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Breakdown Voltage-Min 30 V 30 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Cap Tolerance 20% 20%
Diode Capacitance Ratio-Min 2.3 2.3
Diode Capacitance-Nom 3.3 pF 3.3 pF
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
JEDEC-95 Code DO-7
JESD-30 Code O-LALF-W2 O-LALF-W2
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Power Dissipation-Max 0.4 W 0.4 W
Qualification Status Not Qualified Not Qualified
Quality Factor-Min 450 450
Rep Pk Reverse Voltage-Max 30 V 30 V
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Variable Capacitance Diode Classification ABRUPT
Base Number Matches 5 8
Rohs Code No
Part Package Code DO-7
Pin Count 2
JESD-609 Code e0
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Reverse Current-Max 2e-8 µA
Reverse Test Voltage 25 V
Terminal Finish TIN LEAD