1N5418-PBF
vs
JAN1N5418
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
DIGITRON SEMICONDUCTORS
GENERAL INSTRUMENT CORP
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Application
FAST RECOVERY
EFFICIENCY
Breakdown Voltage-Min
440 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.5 V
JESD-30 Code
O-XALF-W2
O-LALF-W2
Non-rep Pk Forward Current-Max
80 A
80 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
200 °C
Operating Temperature-Min
-65 °C
-65 °C
Output Current-Max
3 A
3 A
Package Body Material
UNSPECIFIED
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Rep Pk Reverse Voltage-Max
400 V
400 V
Reverse Current-Max
1 µA
Reverse Recovery Time-Max
0.15 µs
0.15 µs
Reverse Test Voltage
400 V
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
9
Qualification Status
Not Qualified
Reference Standard
MIL-19500/411
Compare 1N5418-PBF with alternatives
Compare JAN1N5418 with alternatives