1N5408-G vs 1N5408 feature comparison

1N5408-G Comchip Technology Corporation Ltd

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1N5408 JGD Semiconductors Co Ltd

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Rohs Code Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer COMCHIP TECHNOLOGY CO LTD JGD SEMICONDUCTORS CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Samacsys Manufacturer Comchip Technology
Application GENERAL PURPOSE GENERAL PURPOSE
Breakdown Voltage-Min 1000 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1 V
JEDEC-95 Code DO-27 DO-201AD
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Pk Forward Current-Max 150 A 200 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 125 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Reverse Current-Max 10 µA 5 µA
Reverse Test Voltage 1000 V
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 1 2
Additional Feature HIGH RELIABILITY

Compare 1N5408-G with alternatives

Compare 1N5408 with alternatives