1N5407T-G
vs
1N5407-E3/73
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
COMCHIP TECHNOLOGY CO LTD
VISHAY SEMICONDUCTORS
Package Description
O-PALF-W2
O-PALF-W2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Samacsys Manufacturer
Comchip Technology
Application
GENERAL PURPOSE
GENERAL PURPOSE
Breakdown Voltage-Min
800 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1.2 V
JEDEC-95 Code
DO-27
DO-201AD
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Pk Forward Current-Max
150 A
200 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-50 °C
Output Current-Max
3 A
3 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Rep Pk Reverse Voltage-Max
800 V
800 V
Reverse Current-Max
10 µA
Reverse Test Voltage
800 V
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
2
Pbfree Code
Part Package Code
DO-201AD
Pin Count
2
Additional Feature
FREE WHEELING DIODE, LOW LEAKAGE CURRENT
JESD-609 Code
e3
Qualification Status
Not Qualified
Terminal Finish
MATTE TIN
Compare 1N5407T-G with alternatives
Compare 1N5407-E3/73 with alternatives