1N5407G
vs
1N5407GHB0G
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
FORMOSA MICROSEMI CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Application
GENERAL PURPOSE
EFFICIENCY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1 V
JEDEC-95 Code
DO-201AD
DO-201AD
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Pk Forward Current-Max
125 A
125 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Current-Max
3 A
3 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Rep Pk Reverse Voltage-Max
800 V
800 V
Reverse Current-Max
5 µA
5 µA
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
38
1
Rohs Code
Additional Feature
HIGH RELIABILITY, LOW POWER LOSS
JESD-609 Code
e3
Peak Reflow Temperature (Cel)
260
Reference Standard
AEC-Q101
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
10
Compare 1N5407G with alternatives
Compare 1N5407GHB0G with alternatives