1N5406-G vs 1N5406/68-E3 feature comparison

1N5406-G Comchip Technology Corporation Ltd

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1N5406/68-E3 Vishay Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer COMCHIP TECHNOLOGY CO LTD VISHAY SEMICONDUCTORS
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Samacsys Manufacturer Comchip Technology
Application GENERAL PURPOSE GENERAL PURPOSE
Breakdown Voltage-Min 600 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V
JEDEC-95 Code DO-27 DO-201AD
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Pk Forward Current-Max 150 A 200 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -50 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 600 V 600 V
Reverse Current-Max 10 µA
Reverse Test Voltage 600 V
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code DO-201AD
Package Description O-PALF-W2
Pin Count 2
Additional Feature FREE WHEELING DIODE, LOW LEAKAGE CURRENT
JESD-609 Code e3
Qualification Status Not Qualified
Terminal Finish MATTE TIN

Compare 1N5406-G with alternatives

Compare 1N5406/68-E3 with alternatives