1N5404GHX0G vs 1N5404G feature comparison

1N5404GHX0G Taiwan Semiconductor

Buy Now Datasheet

1N5404G Galaxy Microelectronics

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Additional Feature HIGH RELIABILITY, LOW POWER LOSS
Application EFFICIENCY GENERAL PURPOSE
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1.1 V
JEDEC-95 Code DO-201AD
JESD-30 Code O-PALF-W2
JESD-609 Code e3
Non-rep Pk Forward Current-Max 125 A 200 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) 260 260
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 400 V 400 V
Reverse Current-Max 5 µA
Surface Mount NO NO
Terminal Finish MATTE TIN
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 1 38

Compare 1N5404GHX0G with alternatives

Compare 1N5404G with alternatives