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1N5402GB0 vs 1N5402GHR0G feature comparison

1N5402GB0 Taiwan Semiconductor

Buy Now Datasheet

1N5402GHR0G Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS
Application EFFICIENCY EFFICIENCY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
JEDEC-95 Code DO-201AD DO-201AD
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e3
Non-rep Pk Forward Current-Max 125 A 125 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Rep Pk Reverse Voltage-Max 200 V 200 V
Reverse Current-Max 5 µA 5 µA
Surface Mount NO NO
Terminal Finish MATTE TIN MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Samacsys Manufacturer Taiwan Semiconductor
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101
Time@Peak Reflow Temperature-Max (s) 10
Diodes » Rectifier Diodes
Diodes » Rectifier Diodes

Compare 1N5402GB0 with alternatives

Compare 1N5402GHR0G with alternatives