1N5402G-T vs 1N5402GHB0G feature comparison

1N5402G-T Rectron Semiconductor

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1N5402GHB0G Taiwan Semiconductor

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer RECTRON LTD TAIWAN SEMICONDUCTOR CO LTD
Part Package Code DO-201AD
Package Description O-PALF-W2
Pin Count 2
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Samacsys Manufacturer Rectron
Additional Feature HIGH RELIABILITY HIGH RELIABILITY, LOW POWER LOSS
Application GENERAL PURPOSE EFFICIENCY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 Code DO-201AD DO-201AD
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e3
Non-rep Pk Forward Current-Max 150 A 125 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 265 260
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 200 V 200 V
Surface Mount NO NO
Terminal Finish Matte Tin (Sn) MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 10
Base Number Matches 2 1
Forward Voltage-Max (VF) 1 V
Reference Standard AEC-Q101
Reverse Current-Max 5 µA

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Compare 1N5402GHB0G with alternatives