1N5402-GT3 vs 1N5402 feature comparison

1N5402-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet

1N5402 Fuji Electric Co Ltd

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD COLLMER SEMICONDUCTOR INC
Package Description O-PALF-W2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature HIGH RELIABILITY
Application GENERAL PURPOSE GENERAL PURPOSE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 Code DO-201AD DO-201AD
JESD-30 Code O-PALF-W2 O-PALF-W2
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 200 A 200 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 200 V 200 V
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Forward Voltage-Max (VF) 1 V
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Reference Standard UL RECOGNIZED
Reverse Current-Max 10 µA

Compare 1N5402-GT3 with alternatives

Compare 1N5402 with alternatives