1N5401TIN/LEAD
vs
1N5401X0G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Date Of Intro
2018-01-30
Application
GENERAL PURPOSE
EFFICIENCY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.2 V
1 V
JEDEC-95 Code
DO-201AD
DO-201AD
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e0
e3
Non-rep Pk Forward Current-Max
200 A
200 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Output Current-Max
3 A
3 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Rep Pk Reverse Voltage-Max
100 V
100 V
Reverse Current-Max
5 µA
5 µA
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
1
Package Description
O-PALF-W2
Additional Feature
HIGH RELIABILITY, LOW POWER LOSS
Compare 1N5401TIN/LEAD with alternatives
Compare 1N5401X0G with alternatives