1N5401GB0
vs
1N5401G
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Reach Compliance Code |
not_compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Additional Feature |
HIGH RELIABILITY, LOW POWER LOSS
|
HIGH RELIABILITY, LOW POWER LOSS
|
| Application |
EFFICIENCY
|
EFFICIENCY
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.1 V
|
1 V
|
| JEDEC-95 Code |
DO-201AD
|
DO-201AD
|
| JESD-30 Code |
O-PALF-W2
|
O-PALF-W2
|
| JESD-609 Code |
e3
|
e3
|
| Non-rep Pk Forward Current-Max |
125 A
|
125 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-65 °C
|
| Output Current-Max |
3 A
|
3 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Reverse Current-Max |
5 µA
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
MATTE TIN
|
Matte Tin (Sn)
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
2
|
22
|
| Samacsys Manufacturer |
|
Taiwan Semiconductor
|
| Moisture Sensitivity Level |
|
1
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare 1N5401GB0 with alternatives
Compare 1N5401G with alternatives