1N5401G-T
vs
1N5401GHB0G
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
DIODES INC
TAIWAN SEMICONDUCTOR CO LTD
Part Package Code
DO-201AD
Package Description
O-PALF-W2
Pin Count
2
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Factory Lead Time
12 Weeks
Samacsys Manufacturer
Diodes Incorporated
Taiwan Semiconductor
Application
GENERAL PURPOSE
EFFICIENCY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1.1 V
JEDEC-95 Code
DO-201AD
DO-201AD
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
Non-rep Pk Forward Current-Max
125 A
125 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Output Current-Max
3 A
3 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
260
260
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
100 V
100 V
Reverse Recovery Time-Max
2 µs
Surface Mount
NO
NO
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
30
10
Base Number Matches
2
1
Additional Feature
HIGH RELIABILITY, LOW POWER LOSS
Reference Standard
AEC-Q101
Reverse Current-Max
5 µA
Compare 1N5401G-T with alternatives
Compare 1N5401GHB0G with alternatives