1N5399S-GT3 vs 1N5399S feature comparison

1N5399S-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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1N5399S Lite-On Semiconductor Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD LITE-ON SEMICONDUCTOR CORP
Package Description O-PALF-W2 PLASTIC PACKAGE-2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature HIGH RELIABILITY LOW LEAKAGE CURRENT
Application GENERAL PURPOSE GENERAL PURPOSE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 Code DO-15 DO-41
JESD-30 Code O-PALF-W2 O-PALF-W2
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 50 A 50 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Output Current-Max 1.5 A 1.5 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 7
Pbfree Code Yes
Part Package Code DO-41
Pin Count 2
Forward Voltage-Max (VF) 1.1 V
Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 255
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare 1N5399S-GT3 with alternatives

Compare 1N5399S with alternatives