1N5399S vs 1N5399S-GT3 feature comparison

1N5399S Lite-On Semiconductor Corporation

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1N5399S-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer LITE-ON SEMICONDUCTOR CORP SANGDEST MICROELECTRONICS (NANJING) CO LTD
Part Package Code DO-41
Package Description PLASTIC PACKAGE-2 O-PALF-W2
Pin Count 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature LOW LEAKAGE CURRENT HIGH RELIABILITY
Application GENERAL PURPOSE GENERAL PURPOSE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V
JEDEC-95 Code DO-41 DO-15
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Pk Forward Current-Max 50 A 50 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C
Output Current-Max 1.5 A 1.5 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 255
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 7 2
Moisture Sensitivity Level 1

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