1N5397GHB0 vs 1N5397G-H feature comparison

1N5397GHB0 Taiwan Semiconductor

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1N5397G-H Formosa Microsemi Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD FORMOSA MICROSEMI CO LTD
Package Description DO-15, 2 PIN O-PALF-W2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Category CO2 Kg 8.8 8.8
Compliance Temperature Grade Military: -55C to +150C Military: -55C to +150C
EU RoHS Version RoHS 2 (2015/863/EU) RoHS 2 (2015/863/EU)
EU RoHS Exemptions 7(a), 7(c)-I
Candidate List Date 2024-06-27 2024-06-27
SVHC Over MCV 7439-92-1
Conflict Mineral Status DRC Conflict Free
Conflict Mineral Status Source CMRT V6.40
Qualifications AEC-Q101
Additional Feature LOW POWER LOSS
Application EFFICIENCY GENERAL PURPOSE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1.1 V
JEDEC-95 Code DO-204AC DO-15
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Non-rep Pk Forward Current-Max 50 A 50 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 1.5 A 1.5 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 600 V 600 V
Reverse Current-Max 5 µA 5 µA
Surface Mount NO NO
Terminal Finish MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 1 1

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