1N5393GD1 vs 1N5393GHB0 feature comparison

1N5393GD1 Yangzhou Yangjie Electronics Co Ltd

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1N5393GHB0 Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer YANGZHOU YANGJIE ELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Package Description O-PALF-W2 DO-15, 2 PIN
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature HIGH RELIABILITY, LOW POWER LOSS LOW POWER LOSS
Application EFFICIENCY EFFICIENCY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1 V
JEDEC-95 Code DO-204AC DO-204AC
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Pk Forward Current-Max 50 A 50 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 1.5 A 1.5 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Rep Pk Reverse Voltage-Max 200 V 200 V
Reverse Current-Max 2.5 µA 5 µA
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 10
Base Number Matches 1 1
JESD-609 Code e3
Reference Standard AEC-Q101
Terminal Finish MATTE TIN

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