1N5392-GT3
vs
1N5392_AY_10001
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
PAN JIT INTERNATIONAL INC
|
Package Description |
O-PALF-W2
|
O-PALF-W2
|
Reach Compliance Code |
unknown
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.80
|
Additional Feature |
HIGH RELIABILITY
|
|
Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
JEDEC-95 Code |
DO-15
|
DO-15
|
JESD-30 Code |
O-PALF-W2
|
O-PALF-W2
|
Moisture Sensitivity Level |
1
|
|
Non-rep Pk Forward Current-Max |
50 A
|
50 A
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Output Current-Max |
1.5 A
|
1.5 A
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Qualification Status |
Not Qualified
|
|
Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
Surface Mount |
NO
|
NO
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
2
|
1
|
Forward Voltage-Max (VF) |
|
1.4 V
|
Operating Temperature-Max |
|
150 °C
|
Operating Temperature-Min |
|
-55 °C
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Reverse Current-Max |
|
1 µA
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare 1N5392-GT3 with alternatives
Compare 1N5392_AY_10001 with alternatives