1N5391SA1 vs GP15AHE3TR feature comparison

1N5391SA1 Taiwan Semiconductor

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GP15AHE3TR

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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD
Package Description O-PALF-W2
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Category CO2 Kg 8.8
Compliance Temperature Grade Military: -55C to +125C
EU RoHS Version RoHS 2 (2015/863/EU)
Candidate List Date 2020-01-16
EFUP e
Conflict Mineral Status DRC Conflict Free
Conflict Mineral Status Source CMRT V5.12
Additional Feature HIGH RELIABILITY, LOW POWER LOSS
Application EFFICIENCY
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2
Non-rep Pk Forward Current-Max 50 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C
Output Current-Max 1.5 A
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Rep Pk Reverse Voltage-Max 50 V
Reverse Current-Max 5 µA
Surface Mount NO
Terminal Finish PURE TIN
Terminal Form WIRE
Terminal Position AXIAL
Base Number Matches 2

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