1N5391SA1
vs
1N5391SA0G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Package Description
O-PALF-W2
O-PALF-W2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Category CO2 Kg
8.8
Compliance Temperature Grade
Military: -55C to +125C
EU RoHS Version
RoHS 2 (2015/863/EU)
Candidate List Date
2020-01-16
EFUP
e
Conflict Mineral Status
DRC Conflict Free
Conflict Mineral Status Source
CMRT V5.12
Additional Feature
HIGH RELIABILITY, LOW POWER LOSS
HIGH RELIABILITY, LOW POWER LOSS
Application
EFFICIENCY
EFFICIENCY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1.1 V
JEDEC-95 Code
DO-41
DO-204AL
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Pk Forward Current-Max
50 A
50 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
125 °C
125 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Current-Max
1.5 A
1.5 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Rep Pk Reverse Voltage-Max
50 V
50 V
Reverse Current-Max
5 µA
5 µA
Surface Mount
NO
NO
Terminal Finish
PURE TIN
PURE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
1
Compare 1N5391SA1 with alternatives
Compare 1N5391SA0G with alternatives