1N5391SA1
vs
1N5391S-GT3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description
O-PALF-W2
O-PALF-W2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
HIGH RELIABILITY, LOW POWER LOSS
HIGH RELIABILITY
Application
EFFICIENCY
GENERAL PURPOSE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
JEDEC-95 Code
DO-41
DO-15
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Pk Forward Current-Max
50 A
50 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
125 °C
Operating Temperature-Min
-55 °C
Output Current-Max
1.5 A
1.5 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Rep Pk Reverse Voltage-Max
50 V
50 V
Reverse Current-Max
5 µA
Surface Mount
NO
NO
Terminal Finish
PURE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
1
Category CO2 Kg
8.8
EU RoHS Version
RoHS 2 (2015/863/EU)
Moisture Sensitivity Level
1
Qualification Status
Not Qualified
Compare 1N5391SA1 with alternatives
Compare 1N5391S-GT3 with alternatives