We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In

1N5361 vs MV1N5361E3 feature comparison

1N5361 International Semiconductor Inc

Buy Now Datasheet

MV1N5361E3 Microsemi Corporation

Buy Now Datasheet
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC MICROSEMI CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified
Reference Voltage-Nom 27 V 27 V
Surface Mount NO NO
Technology ZENER ZENER
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Tol-Max 20% 20%
Working Test Current 50 mA 50 mA
Base Number Matches 13 1
Pbfree Code Yes
Package Description O-PALF-W2
Pin Count 2
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard MIL-19500
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Diodes » Zener Diodes
Diodes » Zener Diodes

Compare 1N5361 with alternatives

Compare MV1N5361E3 with alternatives