1N5314
vs
1N5314-1E3/TR
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
MOTOROLA SEMICONDUCTOR PRODUCTS
|
MICROCHIP TECHNOLOGY INC
|
| Reach Compliance Code |
unknown
|
compliant
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
CURRENT REGULATOR DIODE
|
CURRENT REGULATOR DIODE
|
| Dynamic Impedance-Min |
235000 Ω
|
235000 Ω
|
| JESD-609 Code |
e0
|
e3
|
| Limiting Voltage-Max |
2.9 V
|
2.9 V
|
| Power Dissipation-Max |
0.6 W
|
0.5 W
|
| Regulation Current-Nom (Ireg) |
4.7 mA
|
4.7 mA
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Matte Tin (Sn)
|
| Base Number Matches |
25
|
1
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.70
|
| Case Connection |
|
ISOLATED
|
| Configuration |
|
SINGLE
|
| JEDEC-95 Code |
|
DO-7
|
| JESD-30 Code |
|
O-LALF-W2
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Package Body Material |
|
GLASS
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Technology |
|
FIELD EFFECT
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
AXIAL
|
|
|
|
Compare 1N5314-1E3/TR with alternatives