1N5295-1E3
vs
JAN1N5295
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
MICROSEMI CORP
KNOX SEMICONDUCTORS INC
Part Package Code
DO-7
DO-7
Package Description
ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
O-LALF-W2
Pin Count
2
2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Additional Feature
METALLURGICALLY BONDED, HIGH SOURCE IMPEDANCE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
CURRENT REGULATOR DIODE
CURRENT REGULATOR DIODE
Dynamic Impedance-Min
1000000 Ω
1000000 Ω
JEDEC-95 Code
DO-7
DO-7
JESD-30 Code
O-LALF-W2
O-LALF-W2
Limiting Voltage-Max
1.25 V
1.25 V
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
200 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Power Dissipation-Max
0.5 W
0.5 W
Regulation Current-Nom (Ireg)
0.82 mA
0.82 mA
Rep Pk Reverse Voltage-Max
100 V
100 V
Surface Mount
NO
NO
Technology
FIELD EFFECT
FIELD EFFECT
Terminal Finish
PURE MATTE TIN
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
6
JESD-609 Code
e0
Knee Impedance-Max
290000 Ω
Qualification Status
Not Qualified
Reference Standard
MIL-19500/463
Compare 1N5295-1E3 with alternatives
Compare JAN1N5295 with alternatives