1N5266-G
vs
1N5266B
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
BKC SEMICONDUCTORS INC
|
| Package Description |
O-XALF-W2
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| JEDEC-95 Code |
DO-35
|
DO-35
|
| JESD-30 Code |
O-XALF-W2
|
O-LALF-W2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
UNSPECIFIED
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
0.5 W
|
0.5 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Voltage-Nom |
68 V
|
68 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
ZENER
|
ZENER
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Voltage Tol-Max |
10%
|
5%
|
| Working Test Current |
1.8 mA
|
1.8 mA
|
| Base Number Matches |
2
|
58
|
| Additional Feature |
|
HIGH SURGE CAPABILITY
|
| Dynamic Impedance-Max |
|
230 Ω
|
| JESD-609 Code |
|
e0
|
| Knee Impedance-Max |
|
1600 Ω
|
| Operating Temperature-Max |
|
200 °C
|
| Reverse Current-Max |
|
0.1 µA
|
| Terminal Finish |
|
TIN LEAD
|
| Voltage Temp Coeff-Max |
|
65.96 mV/°C
|
|
|
|
Compare 1N5266-G with alternatives
Compare 1N5266B with alternatives