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1N5259B-GT3 vs 1N5259BTRE3 feature comparison

1N5259B-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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1N5259BTRE3 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD MICROSEMI CORP
Package Description O-LALF-W2
Reach Compliance Code unknown compliant
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON
Diode Type ZENER DIODE ZENER DIODE
JEDEC-95 Code DO-35
JESD-30 Code O-LALF-W2
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Polarity UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.5 W
Qualification Status Not Qualified
Reference Voltage-Nom 39 V 39 V
Surface Mount NO NO
Technology ZENER
Terminal Form WIRE
Terminal Position AXIAL
Voltage Tol-Max 5% 5%
Working Test Current 3.2 mA 3.2 mA
Base Number Matches 2 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Dynamic Impedance-Max 80 Ω
Operating Temperature-Max 175 °C
Diodes » Zener Diodes
Diodes » Zener Diodes

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