1N5252BT-10A
vs
1N5252BA0G
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
ROHM CO LTD
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Package Description |
O-LALF-W2
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| JEDEC-95 Code |
DO-35
|
DO-15
|
| JESD-30 Code |
O-LALF-W2
|
O-XALF-W2
|
| Knee Impedance-Max |
600 Ω
|
600 Ω
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
200 °C
|
| Package Body Material |
GLASS
|
UNSPECIFIED
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
0.5 W
|
0.5 W
|
| Qualification Status |
Not Qualified
|
|
| Reverse Current-Max |
0.1 µA
|
0.1 µA
|
| Surface Mount |
NO
|
NO
|
| Technology |
ZENER
|
ZENER
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Voltage Temp Coeff-Max |
21.12 mV/°C
|
|
| Working Test Current |
5.2 mA
|
5.2 mA
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Dynamic Impedance-Max |
|
33 Ω
|
| JESD-609 Code |
|
e3
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Reference Voltage-Nom |
|
24 V
|
| Reverse Test Voltage |
|
18 V
|
| Terminal Finish |
|
MATTE TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
10
|
| Voltage Tol-Max |
|
5%
|
|
|
|
Compare 1N5252BT-10A with alternatives
Compare 1N5252BA0G with alternatives