1N5225B vs 1N5225BAR1 feature comparison

1N5225B Sangdest Microelectronics (Nanjing) Co Ltd

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1N5225BAR1 STMicroelectronics

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD STMICROELECTRONICS
Reach Compliance Code compliant unknown
Additional Feature HIGH RELIABILITY, LOW IMPEDANCE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 29 Ω
Forward Voltage-Max (VF) 1.1 V
JEDEC-95 Code DO-35 DO-35
JESD-30 Code O-LALF-W2 O-LALF-W2
Knee Impedance-Max 1600 Ω 1600 Ω
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C 200 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.5 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 3 V 3 V
Reverse Current-Max 50 µA 50 µA
Reverse Test Voltage 1 V
Surface Mount NO NO
Technology ZENER ZENER
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Tol-Max 5% 5%
Working Test Current 20 mA 20 mA
Base Number Matches 4 1
Package Description O-LALF-W2
ECCN Code EAR99
HTS Code 8541.10.00.50
Voltage Temp Coeff-Max

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