1N5222BTR
vs
1N5222B-G
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
ZENER DIODE
ZENER DIODE
Dynamic Impedance-Max
30 Ω
JEDEC-95 Code
DO-35
DO-35
JESD-30 Code
O-PALF-W2
O-XALF-W2
JESD-609 Code
e0
Knee Impedance-Max
1250 Ω
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
200 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
0.5 W
0.5 W
Qualification Status
Not Qualified
Not Qualified
Reference Voltage-Nom
2.5 V
2.5 V
Reverse Current-Max
100 µA
Reverse Test Voltage
1 V
Surface Mount
NO
NO
Technology
ZENER
ZENER
Terminal Finish
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Voltage Temp Coeff-Max
-2.125 mV/°C
Voltage Tol-Max
5%
5%
Working Test Current
20 mA
20 mA
Base Number Matches
2
3
Package Description
O-XALF-W2
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare 1N5222BTR with alternatives
Compare 1N5222B-G with alternatives