1N5221B-GT3 vs 1N5221B feature comparison

1N5221B-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet

1N5221B Galaxy Microelectronics

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Not Recommended
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description O-LALF-W2
Reach Compliance Code unknown unknown
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON
Diode Type ZENER DIODE ZENER DIODE
JEDEC-95 Code DO-35
JESD-30 Code O-LALF-W2
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Polarity UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.5 W
Qualification Status Not Qualified
Reference Voltage-Nom 2.4 V 2.4 V
Surface Mount NO NO
Technology ZENER
Terminal Form WIRE
Terminal Position AXIAL
Voltage Tol-Max 5% 5%
Working Test Current 20 mA 20 mA
Base Number Matches 2 61
Part Package Code DO-35
Dynamic Impedance-Max 30 Ω
Operating Temperature-Max 175 °C
Peak Reflow Temperature (Cel) 260

Compare 1N5221B-GT3 with alternatives

Compare 1N5221B with alternatives