1N5061
vs
1N5061TAP
feature comparison
| Part Life Cycle Code |
Contact Manufacturer
|
Active
|
| Ihs Manufacturer |
GULF SEMICONDUCTOR LTD
|
VISHAY INTERTECHNOLOGY INC
|
| Package Description |
GLASS PACKAGE-2
|
E-LALF-W2
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Additional Feature |
LOW LEAKAGE CURRENT
|
|
| Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1 V
|
1.15 V
|
| JESD-30 Code |
E-LALF-W2
|
E-LALF-W2
|
| Non-rep Pk Forward Current-Max |
50 A
|
50 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
-55 °C
|
| Output Current-Max |
2 A
|
2 A
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ELLIPTICAL
|
ELLIPTICAL
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Rep Pk Reverse Voltage-Max |
600 V
|
600 V
|
| Reverse Current-Max |
1 µA
|
1 µA
|
| Reverse Recovery Time-Max |
3 µs
|
4 µs
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
26
|
1
|
| Rohs Code |
|
Yes
|
| Factory Lead Time |
|
9 Weeks
|
| JESD-609 Code |
|
e4
|
| Moisture Sensitivity Level |
|
2
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Terminal Finish |
|
Gold (Au) - with Nickel (Ni) barrier
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|