1N4935_B0_10001
vs
1N4003G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
PAN JIT INTERNATIONAL INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Application
GENERAL PURPOSE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.2 V
1 V
JEDEC-95 Code
DO-41
DO-41
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Pk Forward Current-Max
30 A
30 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Output Current-Max
1 A
1 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Rep Pk Reverse Voltage-Max
200 V
200 V
Reverse Recovery Time-Max
0.2 µs
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
26
Samacsys Manufacturer
Taiwan Semiconductor
Additional Feature
HIGH RELIABILITY, LOW POWER LOSS
JESD-609 Code
e3
Moisture Sensitivity Level
1
Qualification Status
Not Qualified
Terminal Finish
Matte Tin (Sn)
Compare 1N4935_B0_10001 with alternatives
Compare 1N4003G with alternatives